论文摘要
China’s coupled human-environment system(CHES) is assessed here via a systems schema that emphasizes the complex interactions of components and their attributes. In addition to the human and environment components, we identified two other components to evaluate the relationship. The four components are human activity intensity, resource carrying capacity, ecological constraints and system’s openness. Based on their interactions, we derived a cognitive schema for classifying the level of strain or stress of an area. The analysis draws on 11 indicators and 29 sub-indicators including remote sensing data and statistical data that are used to estimate the four components. The findings indicate that human activities are highly intense in a few geographical areas, particularly large urban systems and trade and investment zones on the eastern coastal areas. Nonetheless, these areas are also well-endowed in water resources and fertile soils although urban systems are increasingly stressed from negative pollution externalities. They are also open systems which allow them to bear a higher level of pressure and adjust accordingly. Desertification and soil erosion point to relatively fragile biophysical systems in the west and southwest, but human activities are still relatively less intense compared to their coastal counterparts. As a whole, only 14% of areas may be said to be relatively or highly strained. This however belies another one-third of areas that are currently unstable, and likely to become strained and thereby vulnerable in the near future.
论文目录
文章来源
类型: 期刊论文
作者: 杨宇,李小云,董雯,POON PH Jessie,洪辉,何则,刘毅
来源: Journal of Geographical Sciences 2019年08期
年度: 2019
分类: 基础科学,工程科技Ⅰ辑
专业: 环境科学与资源利用
单位: Key Laboratory of Regional Sustainable Development Modeling, Institute of Geographic Sciences and Natural Resources Research, CAS,College of Resources and Environment, University of Chinese Academy of Sciences,Academic Divisions of the Chinese Academy of Sciences,Department of Geography, University at Buffalo-SUNY,China International Engineering Consulting Corporation
基金: National Natural Science Foundation of China,No.41430636,No.41571159
分类号: X24
页码: 1261-1283
总页数: 23
文件大小: 1448K
下载量: 259
相关论文文献
- [1].Identification of strained black phosphorous by Raman spectroscopy[J]. Journal of Semiconductors 2017(04)
- [2].Scattering mechanism of hole in(001),(101),(111) biaxially-strained Si and Si_(1-x)Ge_x materials[J]. Journal of Semiconductors 2015(07)
- [3].Strain induced changes in performance of strained-Si/strained-Si_(1-y)Ge_y/relaxed-Si_(1-x)Ge_x MOSFETs and circuits for digital applications[J]. Journal of Central South University 2017(06)
- [4].Averaged hole mobility model of biaxially strained Si[J]. Journal of Semiconductors 2013(08)
- [5].Phase-field crystal modeling of shape transition of strained islands in heteroepitaxy[J]. Science China(Physics,Mechanics & Astronomy) 2012(11)
- [6].Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers[J]. 半导体学报 2011(10)
- [7].Nanoscale strained-Si MOSFET physics and modeling approaches:a review[J]. 半导体学报 2010(10)
- [8].Characteristics of vertical double-gate dual-strained-channel MOSFETs[J]. 半导体学报 2009(06)
- [9].A two-dimensional subthreshold current model for strained-Si MOSFET[J]. Science China(Physics,Mechanics & Astronomy) 2011(12)
- [10].Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model[J]. Chinese Physics B 2011(07)
- [11].Analytical threshold voltage model for strained silicon GAA-TFET[J]. Chinese Physics B 2016(11)
- [12].SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs[J]. 半导体学报 2011(05)
- [13].Effects of Strain Rate and Texture on the Tensile Behavior of Pre-strained NiCr Microwires[J]. Journal of Wuhan University of Technology(Materials Science) 2018(02)
- [14].Penetration depth at various Raman excitation wavelengths and stress model for Raman spectrum in biaxially-strained Si[J]. Science China(Physics,Mechanics & Astronomy) 2013(11)
- [15].Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs[J]. 半导体学报 2010(08)
- [16].A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate[J]. 半导体学报 2012(09)
- [17].Enhanced electroluminescence from a free-standing tensilely strained germanium nanomembrane light-emitting diode[J]. Journal of Semiconductors 2015(10)
- [18].Retarded thermal oxidation of strained Si substrate[J]. Chinese Physics B 2014(06)
- [19].An analytical threshold voltage model for dual-strained channel PMOSFET[J]. Chinese Physics B 2010(11)
- [20].A hybrid functional first-principles study on the band structure of non-strained Ge_(1-x)Sn_x alloys[J]. Chinese Physics B 2017(12)
- [21].Calculation of band structure in (101)-biaxially strained Si[J]. Science in China(Series G:Physics,Mechanics & Astronomy) 2009(04)
- [22].Attractive natural products with strained cyclopropane and/or cyclobutane ring systems[J]. Science China(Chemistry) 2016(09)
- [23].Calculation of band edge levels of strained Si/(111)Si_(1-x)Ge_x[J]. 半导体学报 2010(01)
- [24].High-temperature(T = 80℃) operation of a 2μm InGaSb-AlGaAsSb quantum well laser[J]. 半导体学报 2012(04)
- [25].Fabrication of strained Ge film using a thin SiGe virtual substrate[J]. 半导体学报 2009(09)
- [26].Strain analysis of free-standing strained silicon-on-insulator nanomembrane[J]. Chinese Physics B 2015(03)
- [27].Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET[J]. Journal of Central South University 2013(09)
- [28].Bound polaron in a strained wurtzite GaN/Al_xGa_(1-x)N cylindrical quantum dot[J]. 半导体学报 2011(06)
- [29].The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET[J]. Chinese Physics B 2013(02)
- [30].Hole mobility enhancement of Si by rhombohedral strain[J]. Science China(Physics,Mechanics & Astronomy) 2012(08)