论文摘要
High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of Ⅴ/Ⅲ ratio and indium pre-deposition time on the surface morphology, crystalline quality and electrical properties of the InSb epilayer is systematically investigated using Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction, Hall measurement and contactless sheet resistance measurement. It is found that a 2-μm-thick InSb epilayer grown at 450℃ with a Ⅴ/Ⅲ ratio of 5 and an indium pre-deposition time of 2.5s exhibits the optimum material quality, with a root-meansquare surface roughness of only 1.2 nm, an XRD rocking curve with full width at half maximum of 358 arcsec and a room-temperature electron mobility of 4.6 × 104cm2/V·s. These values are comparable with those grown by molecular beam epitaxy. Hall sensors are fabricated utilizing a 600-nm-thick InSb epilayer. The output Hall voltages of these sensors exceed 10 mV with the input voltage of 1 V at 9.3 mT and the electron mobility of 3.2 × 104cm2/V·s is determined, which indicates a strong potential for Hall applications.
论文目录
文章来源
类型: 期刊论文
作者: 李欣,赵宇,熊敏,吴启花,滕,郝修军,黄勇,胡双元,朱忻
来源: Chinese Physics Letters 2019年01期
年度: 2019
分类: 基础科学,工程科技Ⅰ辑,信息科技
专业: 无机化工,自动化技术
单位: School of Nano Technology and Nano Bionics, University of Science and Technology of China,Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,School of Physical Science and Technology, Shanghai Tech University
基金: Supported by the Hundred Talents Program of Chinese Academy of Sciences,the CAS Interdisciplinary Innovation Team,the National Natural Science Foundation of China under Grant Nos 61874179,61804161 and 61605236,the Key Frontier Scientific Research Program of Chinese Academy of Sciences under Grant No QYZDB-SSW-JSC014
分类号: TP212;TQ133.51
页码: 57-60
总页数: 4
文件大小: 988K
下载量: 33