论文摘要
Lead-based halide perovskites have emerged as excellent semiconductors for a broad range of optoelectronic applications, such as photovoltaics, lighting, lasing and photon detection. However, toxicity of lead and poor stability still represent significant challenges. Fortunately, halide double perovskite materials with formula of A2M（I）M（III）X6 or A2M（IV）X6 could be potentially regarded as stable and green alternatives for optoelectronic applications, where two divalent lead ions are substituted by combining one monovalent and one trivalent ions, or one tetravalent ion. Here, the article provides an up-to-date review on the developments of halide double perovskite materials and their related optoelectronic applications including photodetectors, X-ray detectors, photocatalyst, light-emitting diodes and solar cells. The synthesized halide double perovskite materials exhibit exceptional stability, and a few possess superior optoelectronic properties. However, the number of synthesized halide double perovskites is limited, and more limited materials have been developed for optoelectronic applications to date. In addition, the band structures and carrier transport properties of the materials are still not desired, and the films still manifest low quality for photovoltaic applications. Therefore, we propose that continuing e orts are needed to develop more halide double perovskites, modulate the properties and grow high-quality films, with the aim of opening the wild practical applications.
论文目录
文章来源
类型: 期刊论文
作者: Liang Chu,Waqar Ahmad,Wei Liu,Jian Yang,Rui Zhang,Yan Sun,Jianping Yang,Xing'ao Li
来源: Nano-Micro Letters 2019年01期
年度: 2019
分类: 工程科技Ⅰ辑
专业: 材料科学
单位: New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT),Key Laboratory for Organic Electronics & Information Displays & Institute of Advanced Materials,Jiangsu National Synergistic Innovation Center for Advanced Materials, School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT),Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST)
基金: supported by the Ministry of Education of China (IRT1148),the National Natural Science Foundation of China (U1732126,11804166,51602161,51372119),the National Synergetic Innovation Center for Advanced Materials (SICAM),the China Postdoctoral Science Foundation (2018M630587),the Priority Academic Program Development of Jiangsu Higher Education Institutions (YX03001),the Natural Science Foundation of NJUPT (NY217091)
分类号: TB34
页码: 264-281
总页数: 18
文件大小: 1226K
下载量: 54